2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate
Shanghai Xinkehui New Materials Co. Ltd.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized |
| Ra | Surface roughness(Ra):<=5A |
| Polish | Single or doubles side polished |
| Package | 100 single or doubles side polished |
It has the advantages of high electronic limit drift speed, good radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
Features of Inp Wafer
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical
performance.
2. using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3. the wafer is polished by chemical mechanical polishing (CMP) technology, with surface roughness <0.5nm
4. to achieve the "open box ready to use" requirements
5. according to user requirements, special specifications product processing
| Wafer Diameter(mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
| Thickness(um) | 350±25 | 625±25 | 625±25 |
| TTV-P/P(um) | ≤10 | ≤10 | ≤10 |
| TTv-P/E(um) | ≤10 | ≤15 | ≤15 |
| WARP(um) | ≤15 | ≤15 | ≤15 |
| OF(mm) | 17±1 | 22±1 | 32.5±1 |
| OF/IF(mm) | 7±1 | 12±1 | 18±11 |
| Description | Application | Wavelength Range |
| InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
| DFB laser | 1270nm~1630nm |
| Avalanche photo-detector | 1250nm~1600nm |
| Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
| Product Name |
| High Purity Indium Phosphide Polycrystalline Substrate Sheet |
| Iron Doped Indium Phosphide Crystal |
| N-type and P-type Indium Phosphide Crystal |
| 4 Inch Indium Phosphide Single Crystal Ingot |
| Indium Phosphide Based Epitaxial Wafer |
| Indium Phosphide Semiconductor Crystal Substrate |
| Indium Phosphide Single Crystal Substrate |
| Indium Antimonide Single Crystal Substrate |
| Indium Arsenic Single Crystal Substrate |
Q: Are you a trading company or manufacturer?
A: zmkj is a trading company but has a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.
Q: How long is your delivery time?
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.
Q: Do you provide samples? is it free or extra?
A: Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What are your terms of payment?
A: Payment<= 1000 USD, 100% in advance. Payment>=1000USD,
50% T/T in advance, balance before shipment.
Product Tags:
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Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness Images
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