N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode

N-InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode

N-InP substrate FP Epiwafer's Overview

Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, specifically optimized for optical communication applications. This Epiwafer features an N-type Indium Phosphide (N-InP) substrate, a material renowned for its excellent electronic and optoelectronic properties, making it ideal for high-speed and high-frequency devices.

The Epiwafer is tailored to produce laser diodes operating at a wavelength of 1270 nm, which is a critical wavelength for coarse wavelength division multiplexing (CWDM) systems in fiber optic communications. The precise control of the epitaxial layer’s composition and thickness ensures optimal performance, with the FP laser diode capable of achieving an operational bandwidth of up to 2.5 GHz. This bandwidth makes the device well-suited for high-speed data transmission, supporting applications that demand rapid and reliable communication.

The Fabry-Pérot (FP) cavity structure of the laser diode, facilitated by the high-quality epitaxial layers on the InP substrate, ensures the generation of coherent light with minimal noise and high efficiency. This Epiwafer is engineered to deliver consistent, reliable performance, making it an excellent choice for manufacturers aiming to produce cutting-edge laser diodes for telecommunications, data centers, and other high-speed networking environments.

In summary, our N-InP Substrate FP Epiwafer is a critical component for advanced optical communication systems, offering excellent material properties, precise wavelength targeting, and high operational bandwidth. It provides a robust foundation for producing FP laser diodes that meet the stringent demands of modern high-speed communication networks.

N-InP substrate FP Epiwafer's properties

The N-InP Substrate FP Epiwafer is characterized by a set of specialized properties that make it an ideal choice for the fabrication of Fabry-Pérot (FP) laser diodes used in high-performance optical communication systems. Below are the key properties of this Epiwafer:

1. Substrate Material:

   • Type: N-type Indium Phosphide (N-InP)
   • Properties: High electron mobility, low resistivity, and excellent thermal conductivity, making it suitable for high-speed electronic and optoelectronic applications.

1. Epitaxial Layer:

   • Growth Technique: Epitaxial layers are grown on the N-InP substrate using techniques such as Metal-Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
   • Layer Composition: Precise control of the doping concentration and material composition to achieve desired electronic and optical properties.

2. Wavelength:

   • Target Wavelength: 1270 nm
   • Application: Ideal for coarse wavelength division multiplexing (CWDM) in fiber optic communication systems.

3. Bandwidth:

   • Operational Bandwidth: Up to 2.5 GHz
   • Performance: Suitable for high-speed data transmission, ensuring reliable performance in telecommunications and data networking.

4. Fabry-Pérot Cavity:

   • Structure: The Epiwafer supports the formation of a Fabry-Pérot cavity, essential for generating coherent light with high efficiency.
   • Laser Properties: Produces laser diodes with minimal noise, stable wavelength emission, and high output power.

5. Surface Quality:

   • Polishing: The substrate surface is highly polished to minimize defects, ensuring a high-quality epitaxial layer with minimal dislocations.

6. Thermal Properties:

   • Heat Dissipation: Excellent thermal conductivity of the N-InP substrate supports effective heat dissipation, crucial for maintaining laser diode performance and longevity.

7. Application Suitability:

   • Target Devices: Designed for FP laser diodes used in optical communication systems, data centers, and other high-speed networking environments.

These properties collectively contribute to the Epiwafer’s capability to support the production of high-quality FP laser diodes, meeting the rigorous demands of modern optical communication technologies.

N-InP substrate FP Epiwafer's applicaitons

The N-InP Substrate FP Epiwafer is a critical component in the development of advanced optoelectronic devices, particularly Fabry-Pérot (FP) laser diodes. Its properties make it suitable for a wide range of applications in high-speed communication and related fields. Here are the primary applications:

1. Optical Communication Systems:

   • Fiber Optic Transmission: The Epiwafer is ideal for fabricating FP laser diodes that operate at the 1270 nm wavelength, commonly used in coarse wavelength division multiplexing (CWDM) systems. These systems rely on precise wavelength control to transmit multiple data channels over a single fiber, enhancing bandwidth without the need for additional fibers.
   • High-Speed Data Links: The wafer supports laser diodes with an operational bandwidth of up to 2.5 GHz, making it suitable for high-speed data transmission applications, including metropolitan area networks (MANs) and long-haul optical networks.

2. Data Centers:

   • Interconnects: FP laser diodes fabricated from this Epiwafer are used in optical interconnects within data centers, where high-speed, low-latency communication is crucial. These lasers ensure efficient data transfer between servers, storage systems, and networking equipment.
   • Cloud Computing Infrastructure: As cloud services demand ever-increasing data rates, FP laser diodes help to maintain the performance and reliability of data center networks, supporting large-scale, distributed computing environments.

3. Telecommunications:

   • 5G Networks: The Epiwafer is used in the production of laser diodes for 5G telecommunications infrastructure, where high data rates and reliable connections are necessary. FP laser diodes provide the optical signals needed for transmitting data across the backbone of 5G networks.
   • FTTx (Fiber to the x): This technology involves deploying fiber optic networks closer to end-users (homes, businesses), and FP laser diodes are key components in the optical transmitters used in FTTx systems.

4. Test and Measurement Equipment:

   • Optical Spectrum Analyzers: FP laser diodes produced from this Epiwafer are employed in optical spectrum analyzers, which are essential tools for testing and measuring the performance of optical communication systems.
   • Optical Coherence Tomography (OCT): In medical imaging, particularly in OCT systems, FP laser diodes offer the necessary light source for high-resolution imaging of biological tissues.

5. Sensing and Metrology:

   • Optical Sensors: The precision and stability of FP laser diodes make them suitable for use in optical sensors for environmental monitoring, industrial process control, and biomedical applications.
   • Distance and Positioning Systems: FP laser diodes are also used in systems that require precise distance measurements, such as LIDAR (Light Detection and Ranging) and other positioning technologies.

The N-InP Substrate FP Epiwafer’s versatility and high-performance characteristics make it a cornerstone for a wide range of cutting-edge technologies in optical communications, data centers, telecommunications, and beyond.

N-InP substrate FP Epiwafer's photos

1270nm N-InP substrate

FP laser diode N-InP substrate

2.5G N-InP substrate

N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode Images